advanced power n-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss 200v fast switching characteristic r ds(on) 1.2 simple drive requirement i d 1a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t a =25 continuous drain current, v gs @ 10v 3 a i d @t a =70 continuous drain current, v gs @ 10v 3 a i dm pulsed drain current 1 a p d @t a =25 total power dissipation w t stg t j operating junction temperature range thermal data symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 45 /w data & specifications subject to change without notice parameter storage temperature range -55 to 150 1 parameter 201010121 AP04N20GK-HF + 20 rating 200 halogen-free product 1 4 2.7 0.8 -55 to 150 g d s a p04n20 uses rugged design with the best combination of fast switching and cost-effectiveness. the sot-223 package is designed for suface mount application, larger heatsink than so-8 and sot package. d d s g sot-223
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 200 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =1a - - 1.2 v gs =4.5v, i d =0.6a - - 1.3 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =1a - 2.8 - s i dss drain-source leakage current v ds =160v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =1a - 8.5 14 nc q gs gate-source charge v ds =160v - 1.1 - nc q gd gate-drain ("miller") charge v gs =10v - 2.1 - nc t d(on) turn-on delay time 2 v dd =100v - 4 - ns t r rise time i d =1a - 6 - ns t d(off) turn-off delay time r g =3.3 -16- ns t f fall time v gs =10v - 6.5 - ns c iss input capacitance v gs =0v - 225 360 pf c oss output capacitance v ds =25v - 50 - pf c rss reverse transfer capacitance f=1.0mhz - 15 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =1a, v gs =0 v , - 90 - ns q rr reverse recovery charge di/dt=100a/s - 260 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP04N20GK-HF 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 120 /w when mounted on min. copper pad.
a p04n20gk-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 2 4 6 8 0 4 8 12 16 20 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =1a v g =10v 0 1 2 3 4 0 5 10 15 20 25 30 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 6.0v v g =5 .0v 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j = 150 o ct j = 25 o c 0 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) i d =250ua i d =1ma
AP04N20GK-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 120 /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.001 0.01 0.1 1 10 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 2 4 6 8 10 12 024681012 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =1a v ds =160v 0 100 200 300 400 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge operation in this area limited by r ds(on)
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